Weak localisation theory for lightly doped semiconductor quantum wires

作者: G Y Hu , R F O'Connell

DOI: 10.1088/0953-8984/2/24/006

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摘要: A weak localisation theory for a semiconductor quantum wire, which has width of the order Fermi wavelength, is presented. In our model electronic motion essentially one-dimensional and length L, much larger than mean free path I, so that, in contrast to conventional theories non-localised wire with total L conductance depends on instead L,, implying temperature independent behaviour. Our explains recent experiments found transport behaviour at very low tem- perature narrow AlGaAs/GaAs wire. studying AC conductivity, calculation predicts > there exists critical value frequency above system delocalised conductivity a(w) rises as w2.

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