作者: Terry M. Tritt , Ronald L. Jacobsen , Alexander C. Ehrlich , Darrell J. Gillespie
DOI: 10.1016/0921-4526(94)90981-4
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摘要: Abstract It is known that a stress-induced phase transition exists in TaSe3. [1, 2] We have simultaneously measured the stress, strain and resistance TaSe3 samples through this transition. performed these measurements over range of temperature from 25K to 300K also evaluated Young's modulus, Y, same find values which are comparable with those obtained for TaS3 NbSe3. The modulus appears two levels; high stress low value consistent origin being structural nature. dramatic electronic properties material exhibits under discussed terms