Properties of Hg0.71Cd0.29Te and some native oxides by spectroscopic ellipsometry
作者： H. Arwin , D. E. Aspnes , D. R. Rhiger
DOI: 10.1063/1.331984
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摘要: We have used spectroscopic ellipsometry to determine the complex dielectric function from 1.5 6.0 eV for Hg0.71Cd0.29Te and some of its native oxides. The electrochemically grown anodic oxide was found an absorption threshold near 3 shows features TeO2. no evidence a Te‐rich layer between semiconductor. However, after stripping with HCl, residual Te‐like optical chemical properties did appear. Thin oxides formed by exposure ozone‐containing oxygen had functions similar that but broader edge. These could be stripped partly water totally HCl. This confirms they are mixture several as also concluded in other investigations. any disorder or defects induced HgCdTe anodization etching.
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