Nonlinearity analysis of resistor string A/D converters

作者: S. Kuboki , K. Kato , N. Miyakawa , K. Matsubara

DOI: 10.1109/TCS.1982.1085168

关键词:

摘要: A mismatch in the resistor ratio causes nonlinearity successive-approximation A/D converters fabricated with a 2^{n}R potentiometric technique. This paper describes theoretical analysis of this kind and method evaluating variations resistance obtained experiments monolithic resistors. The are classified into statistically random variation component deterministic component. relationship both components to error is then clarified. 7-bit diffused string was silicon-gate NMOS process. An autocorrelation technique used identify separate several string. On basis experimental results that were obtained, we have developed 10-bit confirmed their accuracy.

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