Processes for hermetically packaging wafer level microscopic structures

作者: Kin P. Cheung

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摘要: A process for hermetically packaging a microscopic structure including MEMS device is provided. The the present invention includes steps of depositing capping layer sacrificial material patterned by lithography over supported on substrate, support dielectric layer, providing plurality vias through lithography, removing via wet etching to leave intact in form shell having cavity occupied structure, metal that thick enough provide barrier against gas permeation, but thin open, and selectively applying under high vacuum laser beam proximate each sufficient period time melt sealing via.

参考文章(12)
Roy D. Hollaway, Steven Webster, Thomas P. Glenn, Vacuum sealed package for semiconductor chip ,(2001)
Timothy Edward Boles, Joel Lee Goodrich, Hermetic electric component package ,(2002)
Carl B. Freidhoff, Thin film encapsulation of mems devices ,(2003)
B. Woratschek, P. Carey, M. Stolz, F. Bachmann, Improved excimer laser planarization of AlSi with addition of Ti or Cu international ieee vlsi multilevel interconnection conference. pp. 309- 314 ,(1989) , 10.1109/VMIC.1989.77989
Valluri Rao, John Heck, Michele Berry, Daniel Wong, Packaging microelectromechanical systems ,(2003)
Jeffrey Peter Serbicki, Peter G. Bessey, Michael L. Boroson, John Schmittendorf, Highly moisture-sensitive electronic device element and method for fabrication utilizing vent holes or gaps ,(2002)
Ruichen Liu, KP Cheung, WYC Lai, R Heim, None, A study of pulsed laser planarization of aluminum for VLSI metallization international ieee vlsi multilevel interconnection conference. pp. 329- 335 ,(1989) , 10.1109/VMIC.1989.77992
Y.T. Cheng, W.T. Hsu, L. Lin, C.T. Nguyen, K. Najafi, Vacuum packaging technology using localized aluminum/silicon-to-glass bonding international conference on micro electro mechanical systems. pp. 18- 21 ,(2001) , 10.1109/MEMSYS.2001.906468