Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias.

摘要: Bottom-up Cu deposition in metallized through silicon vias (TSV) depends on a co-adsorbed polyether-Cl- suppressor layer that selectively breaks down within recessed surface features. This work explores when formation of the blocking is limited by flux Cl-. constraint leads to transition from passive surfaces active partway via sidewall due coupling between and breakdown as well topography. The impact Cl- concentration hydrodynamics phase its potential-dependent examined. onset suppression related local coverage determined adsorption isotherm or transport flux. A two-additive co-adsorption model presented correlates voltammetric potential with depth passive-active during TSV filling under conditions incorporation utility waveforms optimize feature process demonstrated. At higher concentrations (≥80 μmol/L), occurs near bottom followed shift bottom-up growth like seen at concentrations.