Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE
作者： Mahesh Kumar , Thirumaleshwara N. Bhat , Mohana K. Rajpalke , Basanta Roul , A.T. Kalghatgi
DOI: 10.1016/J.JALLCOM.2011.10.009
关键词:
摘要: In the present work, we report growth of wurtzite InN epilayers on GaN/Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The parameters such as indium flux, temperature and RF power affect crystallographic morphological properties layers, which were evaluated using high resolution X-ray diffraction (HRXRD) analysis atomic force microscopy (AFM). It is found that excess (In) concentrations surface roughness increased with increase in flux temperature. intensity HRXRD (0 0 2) peak, corresponding to c-axis orientation has been full width at half maxima (FWHM) decreased power. was highly oriented can be grown 450 degrees C temperature, W 1.30 x 10(-7) mbar equivalent pressure (BEP). energy gap layers optimizing conditions determined photoluminescence optical absorption measurement. (C) 2011 Elsevier B.V. All rights reserved.
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