Optical studies of nitrogen plasma for molecular beam epitaxy of InN

摘要: We report on the optical characterization of a nitrogen plasma source based radiofrequency (RF) used to grow III-nitride materials by molecular beam epitaxy (MBE). Optical emission spectroscopy (OES) was study response as function RF power applied and flow rate nitrogen. Analysis intensities spectral signals assigned atomic species ratio these is performed in detail. The OES results show that studied sensitive produce an signal, while varying incoming impacts signal metastable molecules; this outcome allows for determination conditions under which certain types are favored over others. InN films were grown AlN-buffered Si(111) substrates MBE different operational parameters, where, according studies, or excited plasma. In situ reflection high-energy electron diffraction, scanning microscopy, x-ray diffraction techniques employed characterize samples. It found surface morphology highly conditions. A transition growth mode from smooth compact coalesced islands columnar structures observed when dominant reactive discussed correlated with present