Nanosized Ti-doped MoO3 thin films for gas-sensing application
作者： V Guidi , D Boscarino , L Casarotto , E Comini , M Ferroni
DOI: 10.1016/S0925-4005(01)00703-1
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摘要: Abstract Development of MoO 3 as a novel material for gas sensing was addressed. Thin films were produced by reactive rf sputtering assisted annealing. Doping with Ti performed to enhance the conductance film. It came out that layers two orders magnitude more conductive than undoped material. Good and reversible response CO achieved at 300°C, which fell off higher temperatures. An interesting feature considerably fast both NO 2 despite low operating temperature. Doped found operate best about 100°C below pure layers.
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