Method and apparatus for gas phase treating substrates

作者: Ichiro Kato , Takashi Ito

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摘要: Despite the short lifetime of excited plasma gas, a very large number wafers can be uniformly gas phase treated in state by using single high frequency power supply coil or capacitor, not only for exciting reaction passing near tube but also heating radiators, surrounding substrates, which heat wafers.

参考文章(4)
Takao Nozaki, Hideki Arakawa, Hajime Ishikawa, Masaichi Shinoda, Takashi Ito, Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation ,(1980)
R. C. Chittick, J. H. Alexander, H. F. Sterling, The Preparation and Properties of Amorphous Silicon Journal of The Electrochemical Society. ,vol. 116, pp. 77- 81 ,(1969) , 10.1149/1.2411779