A multi-physics model of the VJFET with a lateral channel
作者： Bergogne Dominique , Meuret Regis , Tournier Dominique , Morel Herve , Hamieh Youness
DOI:
关键词:
摘要: A multi-physics model of the VJFET with a lateral channel is presented. The has been implemented and tested in SABER using MAST language. includes an asymmetric representation which main contribution paper. blocking condition not so obvious it presented details. Each junction structure represented as Shockley pn-junction parallel associated capacitance. comparison between simulations experiments yields to satisfying results, both static dynamic conditions. analysis remaining difficulties be solved given.
archives-ouvertes.fr参考文章(9)
Dushan Boroyevich, Vikram D. Immanuel, Kamiar J. Karimi, Fred Wang, Rolando Burgos, Puqi Ning, Dong Jiang, Rixin Lai, Di Zhang, Development of a 10 kW high power density three-phase ac-dc-ac converter using SiC devices european conference on power electronics and applications. pp. 1- 12 ,(2009)
B. Jayant Baliga, Modern power devices ,(1987)
Peter Friedrichs, Heinz Mitlehner, Rainer Kaltschmidt, Ulrich Weinert, Wolfgang Bartsch, Christian Hecht, Karl Otto Dohnke, Benno Weis, Dietrich Stephani, Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories Materials Science Forum. pp. 1243- 1246 ,(2000) , 10.4028/WWW.SCIENTIFIC.NET/MSF.338-342.1243
Dominique Bergogne, Herve Morel, Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Bruno Allard, Regis Meuret, Sebastien Vieillard, Stephane Rael, Farid MeibodyTabar, Towards an airborne high temperature SiC inverter power electronics specialists conference. pp. 3178- 3183 ,(2008) , 10.1109/PESC.2008.4592442
Olivier Berry, Youness Hamieh, Stéphane Raël, Farid Meibody-Tabar, Sébastien Vieillard, Dominique Bergogne, Hervé Morel, Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source Capacitor Materials Science Forum. pp. 957- 960 ,(2010) , 10.4028/WWW.SCIENTIFIC.NET/MSF.645-648.957
A.S. Kashyap, P.L. Ramavarapu, S.M. Lal, T.R. McNutt, A.B. Lostefter, T. Funaki, H.A. Mantooth, Compact circuit simulation model of silicon carbide static induction and junction field effect transistors 2004 IEEE Workshop on Computers in Power Electronics, 2004. Proceedings.. pp. 29- 35 ,(2004) , 10.1109/CIPE.2004.1428116
W.W. Wong, J.J. Liou, JFET circuit simulation using SPICE implemented with an improved model IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. ,vol. 13, pp. 105- 109 ,(1994) , 10.1109/43.273745
E. Platania, Z. Chen, F. Chimento, L. Lu, E. Santi, A. Raciti, J. Hudgins, A. Mantooth, D. Sheridan, J. Cassady, A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field ieee industry applications society annual meeting. pp. 1- 8 ,(2008) , 10.1109/08IAS.2008.364
Jiwon Chang, Ashok K. Kapoor, Leonard F. Register, Sanjay K. Banerjee, Analytical Model of Short-Channel Double-Gate JFETs IEEE Transactions on Electron Devices. ,vol. 57, pp. 1846- 1855 ,(2010) , 10.1109/TED.2010.2051193