Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition
作者： H.K. Woo , Yafei Zhang , S.T. Lee , C.S. Lee , Y.W. Lam
DOI: 10.1016/S0925-9635(96)00615-2
关键词:
摘要: Polycrystalline carbon nitride films have been deposited on Si(111) substrates by d.c. and r.f. plasma-assisted hot filament chemical vapor deposition using a mixture of NH3, CH4 H2. For prepared b2 both methods, the X-ray diffraction peaks match those theoretical β-C3N4 structure. Raman scattering detects no diamond, graphite or amorphous in films. XPS analysis shows that contain mainly CN, CN bonding structures. The N to C concentration ratio is estimated be 0.36 0.16, respectively.
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