Synthesis and characterization of boron carbon nitride films by radio frequency magnetron sputtering

摘要: Abstract Boron carbon nitride (BCN) films were deposited on silicon substrates by radio frequency (r.f.) (13.56 MHz) magnetron sputtering from hexagonal boron (h-BN) and graphite targets in an Ar–N 2 gas mixture of a constant pressure 1.0 Pa. During deposition, the maintained at temperature 400°C negatively biased using pulsed voltage with 330 kHz. Different analysis techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron (AES), Fourier transform infrared (FTIR), Raman spectroscopy, diffraction (XRD) scanning microscopy (SAM) used for characterization. In addition, mechanical tribological properties investigated nano-indentation micro-scratching. The concentration could be adjusted coverage area sheet h-BN target, decreased increasing bias voltage. It was found that ternary compound within B–C–N composition triangle possessed less ordered structure. BN, BC CN chemical bonds established films, no phase separation occurred. At zero voltage, amorphous BC N atomically smooth surface obtained, microfriction coefficient 0.11 under normal load 1000 μN. Hardness determined usually range 10–30 GPa, whereas Young’s modulus 100–200 GPa.