Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition
作者： Md.Nizam Uddin , Osama A. Fouad , Masaaki Yamazato , Masamitsu Nagano
DOI: 10.1016/J.APSUSC.2004.06.020
关键词: Thin film 、 Deposition (phase transition) 、 Nitride 、 Hexamethylenetetramine 、 Carbon film 、 Chemical vapor deposition 、 Carbon nitride 、 Chemistry 、 Analytical chemistry 、 Plasma-enhanced chemical vapor deposition 、 Surfaces, Coatings and Films
摘要: Abstract Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N2 gas both carrier gas. The sp3-bonded CN structure in HMTA considered significantly the precursor selection. X-ray diffraction analysis indicated that film a mixture of crystalline α- β-C3N4 well graphitic-C3N4 β-Si3N4 which not easily distinguished. Raman spectroscopy also suggested existence films. photoelectron study presence sp2- structures sp3CN bonding predominated to sp2 bulk composition N found be bound Si atoms product was, therefore, described CNx:Si, where x depends depth, with some evidences C3N4 formation.
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