Production and characterisation of carbon nitride thin films produced by a graphite hollow cathode system
作者： Stephen Muhl , Adriana Gaona-Couto , Juan Manuel Méndez , Sandra Rodil , Gonzalo Gonzalez
DOI: 10.1016/S0040-6090(97)00377-5
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摘要: Abstract Carbon nitride thin films have been prepared by plasma enhanced chemical vapour deposition of CH 4 and N 2 gas mixtures, transport from a hollow graphite cathode. The deposits on pieces single crystal silicon substrates were characterised using FTIR, Raman, SEM, EDX, SIMS, X-ray electron diffraction. Single, double triple carbon nitrogen bonds detected in the FTIR spectra; relative intensities associated bands being function power substrate bias. Elemental analysis deposit showed that content was ∼57 at%. A polycrystalline identified as hexagonal β -C 3 obtained at low temperatures. found to grow preferentially scratch defects surface stable upon annealing under vacuum up 700°C.
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