Improved PbZr0.52Ti0.48O3 film quality on SrRuO3/SrTiO3 substrates
作者： J. Rodríguez Contreras , H. Kohlstedt , A. Petraru , A. Gerber , B. Hermanns
DOI: 10.1016/J.JCRYSGRO.2004.12.137
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摘要: Abstract We have used high-pressure on-axis sputtering to deposit single crystalline epitaxial PbZr0.52Ti0.48O3 either on SrRuO3/SrTiO3 or SrTiO3 substrates. The films possess a small mosaicity both, and thin larger out-of-plane lattice parameter smaller in-plane when it is grown Atomic force microscopy reveals very smooth surfaces. stoichiometry has been verified by Rutherford backscattering spectrometry. Channeling measurements indicate that the quality of substrate significantly improved compared its deposition blank This observation discussed in framework mismatch, thermal expansion coefficients, interdiffusion at PbZr0.52Ti0.48O3/SrRuO3 interface, depolarization field ferroelectrics surface layer termination substrate.
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