Influence of nanomechanical properties on single-electron tunneling: A vibrating single-electron transistor
作者： Daniel Boese , Herbert Schoeller
DOI: 10.1209/EPL/I2001-00367-8
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摘要: We describe single-electron tunneling through molecular structures under the influence of nanomechanical excitations. develop a full quantum-mechanical model, which includes charging effects and dissipation, apply it to vibrating C60 transistor experiment by Park et al. (Nature, 407 (2000) 57). find good agreement argue vibrations be essential electronic systems. propose mechanism realize negative differential conductance using local bosonic
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