Design and analysis of compact ultra energy-efficient logic gates using laterally-actuated double-electrode NEMS

摘要: Nano-Electro-Mechanical Switches (NEMS) are among the most promising emerging devices due to their near-zero subthreshold-leakage currents. This paper reports device fabrication and modeling, as well novel logic gate design using “laterally-actuated double-electrode NEMS” structures. The new structure has several advantages over existing NEMS architectures such being immune impact bouncing release vibrations (unlike a vertically-actuated NEMS) offer higher flexibility implement compact gates single-electrode NEMS). A comprehensive analytical framework is developed model different properties of these by solving Euler-Bernoulli's beam equation. proposed validated measurement data for fabricated devices. It shown that ignoring non-uniformity electrostatic force distribution, models “underestimate” actual value V pull-in pull-out . Furthermore, energy efficient NEMS-based circuit topologies introduced inverter, NAND, NOR XOR gates. For instance, can be implemented only two compared static CMOS-based requires at least 10 transistors.