作者: Weon Wi Jang , Jeong Oen Lee , Jun-Bo Yoon , Min-Sang Kim , Ji-Myoung Lee
DOI: 10.1063/1.2892659
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摘要: We developed titanium nitride (TiN) based nanoelectromechanical (NEM) switch with the smallest suspension air-gap thickness ever made to date by a “top-down” complementary metal-oxide semiconductor fabrication methods. Cantilever-type NEM 15-nm-thick air gap and 35-nm-thick TiN beam was successfully fabricated characterized. The cantilever-type showed an essentially zero off current, abrupt switching less than 3mV/decade, on/off current ratio exceeding 105 in ambient. Also achieved endurance of over several hundreds cycles under dc ac biases