Oxygen ion implantation at 20 to 2000 keV into polysulfone for improvement of endothelial cell adhesion.
作者： Guochun Xu , Yutaka Hibino , Yasuo Suzuki , Yoshiaki Suzuki , Kimi Kurotobi
DOI: 10.1016/S0927-7765(00)00161-2
关键词:
摘要: The irradiation effects of oxygen on polysulfone have been investigated at energies 20 keV, 150 keV and 2 MeV. strong improvement endothelial cell adhesion proliferation is found ion irradiated keV. Such declined with increasing energy. changes surface color free energy are strongly dependent dose. formation amorphous carbon phase demonstrated by Raman spectroscopy its degree correspondent to the observed. formations hydroxyl carboxyl groups confirmed attenuated total reflectance (ATR) FTIR spectroscopy. depletions heteroatoms conjectured detail analysis X-ray photoelectron (XPS). Since no single one these can be related directly improved cells surface, we argue that distribution functional crucial in promoting cells. Although cannot detected present, were results TRIM simulation. controlled adjusting size dose irradiating for optimum morphology adhesion.
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