Polarized Raman spectroscopy–stress relationship considering shear stress effect
作者： Lulu Ma , Xuejun Fan , Wei Qiu
DOI: 10.1364/OL.44.004682
关键词:
摘要: This Letter uses polarized Raman spectroscopy as a “strain rosette” to quantitatively determine all the in-plane components of stress tensor for (110) silicon. Through spectroscopy, wavenumber shifts can be obtained at same point with different polarization directions incident and/or scattered light. With least three measured in directions, surface that contains two non-equal normal stresses and one shear calculated accordingly. We develop an analytical linear shift–stress relationship when is considered. The experimental results verify theoretical predictions. It shows simple condition assumption may lead erroneous results.
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