Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field-effect transistors
作者： Jianan Yang , Gerold W. Neudeck , John P. Denton
DOI: 10.1063/1.1417995
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摘要: Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) were characterized. A simple method was demonstrated for the fabrication SOI MOSFETs with in their channel region. islands created using selective epitaxial growth/epitaxial lateral overgrowth technology. The influence device I–V characteristics determined and compared to that nearby identical devices without faults. Off-state leakage currents, threshold voltage shift, drive current lowering observed Based location relative region, various physical models proposed explain phenomena observed.
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