Theory of local-phonon-coupled low-energy anharmonic excitation of the interstitial oxygen in silicon

摘要: The previous model for the low-energy anharmonic excitation of interstitial oxygen in silicon [D. R. Bosomworth, W. Hayes, A. L. Spray, and G. D. Watkins, Proc. Soc. London, Ser. A 317, 133 (1970)] is expanded so that coupling to local phonon included. result calculation explains previously observed absorption peaks $^{16}\mathrm{O}$ $^{18}\mathrm{O}$ 30-, 1100-, 1200-${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ bands, confirming energy-level scheme transition assignment Bosomworth et al. significantly reduces level separations excitation, plays an important role explaining isotope peak shifts. physical interpretation given calculated negative constant. origin 517- 1700-${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ bands also discussed.