作者: Naohiro Shoda , Peter Weigand
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摘要: Apparatus and method are provided for obtaining improved measurement control of the temperature a semiconductor wafer (W) during processing. The apparatus includes chuck holding processing, coolant gas supply (16), sensing arrangement measuring controlling A top face (22) over which is positioned, configured with plurality holes (34) into gas, such as helium, admitted at controlled rate pressure. passes through narrow space (36) between underside evacuated via an exhaust line (30) after being heated to (or nearly to) wafer. Temperature now-heated continuously measured by sensor generates signal pressure flow Close thereby maintained desired value