Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)
作者： C. Bouhafs , V. Darakchieva , I. L. Persson , A. Tiberj , P. O. Å. Persson
DOI: 10.1063/1.4908216
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摘要: … on the C-face of 4H-SiC by high-temperature sublimation in an … In the vicinity of the SiC steps induced by the restructuring, it … to the different surface restructuring of 4H-SiC(000-1). 48. J. …
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