CMOS voltage reference

作者: Sandeep K. Guliani

DOI:

关键词:

摘要: A circuit is described as a generating supply-independent voltage reference. In MOS technology, current mirror section incorporating pair of N-channel and W-channel tracking devices are coupled to power supply V cc for reference output that directly proportional tn -V tw . the gate threshold device, while device. start-up further maintaining operating point 1 independent voltage. The degree independence can be increased by adding P-channel device present invention. Thus, invention generates from supply, temperature process minimizing dissipation. When replaces sensing non-volatile memory such an EPROM overshoot encountered during read mode minimized. It follows not only solves one key yield losses seen on but also improves access time same devices.

参考文章(7)
Eugene R. Bukowski, Charles R. Hoffman, CMOS reference voltage generation ,(1987)
George Perlegos, William S. Johnson, Jerry Mar, Dov Frohman-Bentchkowsky, Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same ,(1978)
William H. Owen, Richard D. Pashley, Kim R. Kokkonen, Low power/high speed static ram ,(1977)
Phillip J. Salsbury, George Perlegos, Mos buffer circuit ,(1977)