作者: Sandeep K. Guliani
DOI:
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摘要: A circuit is described as a generating supply-independent voltage reference. In MOS technology, current mirror section incorporating pair of N-channel and W-channel tracking devices are coupled to power supply V cc for reference output that directly proportional tn -V tw . the gate threshold device, while device. start-up further maintaining operating point 1 independent voltage. The degree independence can be increased by adding P-channel device present invention. Thus, invention generates from supply, temperature process minimizing dissipation. When replaces sensing non-volatile memory such an EPROM overshoot encountered during read mode minimized. It follows not only solves one key yield losses seen on but also improves access time same devices.