System and method for measuring the doping level and doping profile of a region in a semiconductor substrate
作者： Peter G. Borden
DOI:
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摘要: A system for measuring the doping levels of a doped region in semiconductor substrate, wherein an analyzer beam and reference are generated, beams being substantially parallel spaced apart from each other so that non-overlapping. The is focused on preselected substrate undoped generating phase shift relative to corresponding level substrate. detector detects beam, determined shift. may be used control fabrication process.
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