Self-doping and partial oxidation of metal-on-organic interfaces for organic semiconductor devices studied by chemical analysis techniques
作者： Sebastian Scholz , Qiang Huang , Michael Thomschke , Selina Olthof , Philipp Sebastian
DOI: 10.1063/1.3018716
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摘要: The performance of organic electronic devices, such as light emitting diodes, transistors, or solar cells, depends critically on the chemical composition metal/organic and organic/metal interfaces which inject extract charges into from device. By combining a number techniques, x-ray photoemission spectroscopy (XPS) sputter depth profiling, XPS itself, secondary ion mass spectrometry, laser desorption/ionization time-of-flight we investigate reasons for differences in charge injection metallic bottom top contacts either preferentially hole electron transporting materials. We find that deposition metal onto semiconductors creates an organic-inorganic mixed interlayer between bulk material metal. In case injection, this acts highly doped layer, while no significant improvement is visible. addition to sel...
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