Heteroepitaxy of AlN on α-Al2O3 by electron cyclotron resonance plasma-assisted chemical vapor deposition at low temperatures
作者： Wei Zhang , Yoshihiro Someno , Makoto Sasaki , Toshio Hirai
DOI: 10.1016/0022-0248(93)90279-6
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摘要: Abstract Epitaxial growth of AlN films was achieved on α-Al2O3(012) single crystal substrates by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using AlBr3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 630°C. The (102)-oriented epitaxial were, for the first time, successfully grown substrates, and they consist two types crystallite whose in-plane orientations are AlN[ 1 2 0]‖α-Al2O3[2 01] 0]‖α-Al2O3[20 21 ], respectively.
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