High-temperature oxidation behaviour of Ti3Si(1−x)AlxC2 in air

作者: Xiaopan Liu , Long Wan , Zhongheng Bu , Daojun Nie

DOI: 10.1007/S12034-009-0082-0

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摘要: The oxidation behaviours of bulk Ti3Si(1−x)AlxC2 prepared by hot pressing were investigated. results showed that the isothermal behaviour Ti3SiC2 obeyed a parabolic law between 900 and 1100°C, followed two-step rate 1200°C 1300°C. cyclic material is assumed to obey three-step at 1100°C 1200°C. calculated activation energy 101·43 kJ·mol−1. oxide layers consisted mass α-Al2O3 little TiO2 SiO2 are observed on as dense adhesive protect scale. mechanism varies with additive aluminum greatly improves resistance Ti3SiC2.

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