Effect of electron irradiation in Bi2Sr2CaCu2O8 and Bi2Sr2CuO6 superconductors
作者： F. Rullier-Albenque , A. Legris , H. Berger , L. Forro
DOI: 10.1016/0921-4534(95)00552-8
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摘要: Abstract The effect of electron-irradiation induced defects on the superconducting transition temperature ( T c ), normal-state resistivity and stability thermal cycling were studied in Bi 2 Sr CaCu O 8 CuO 6 superconductors. It was found that / c0 is about three times less sensitive to irradiation-induced former than latter compound. We show ab plane increase both compounds due decrease mean free path caused by created planes. start anneal above 100 K and, at 300 K; only 50% low-temperature defect concentration left.
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