Performance and reliability of post-CMOS metal/oxide MEMS for RF application

摘要: This paper describes work carried out to assess the elastic performance of microelectromechanical (MEMS) test structures in a post-CMOS (complementary metal oxide semiconductor) process. Electrostatic pull-in measurements are used extract residual stress, modulus and stress-gradient for Results presented composite metal/oxide structures. The extracted parameters compared with values obtained from blanket film analysis based on bulk material properties. Test have also been tested cycling repeatability. A drift is observed successive cycles electrostatic actuation this attributed charge trapping nitride passivation underlying CMOS charge-balance model estimate trapped effect voltage polarity discussed. results indicate that satisfactory mechanical dependent process conditions but can be achieved. stability electrical operating characteristics dominated by effects. quantified using basic model. To minimize problems due dielectric properties must investigated modified.