Surface production of CF, CF2, and C2 radicals in high-density CF4/H2 plasmas
作者： K. Sasaki , H. Furukawa , K. Kadota , C. Suzuki
DOI: 10.1063/1.1319974
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摘要: Surface production of CF, CF2, and C2 radicals in high-density CF4/H2 plasmas was examined using laser-induced fluorescence spectroscopy. No significant amount surface observed pure CF4 plasmas. The addition H2 into enhanced the CFx from fluorocarbon film deposited on chamber wall. characteristics cw discharges are reported, comparison with pulsed discharges. In addition, it has been found that rates determined not by partial pressure but flow rate H2, suggesting consumption feedstock indicates these precursors for deposition plasma. mechanism plasma is discussed, taking account C2.
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