Effect of surface temperature on plasma-surface interactions in an inductively coupled modified gaseous electronics conference reactor
作者： Baosuo Zhou , Eric A. Joseph , Sanket P. Sant , Yonghua Liu , Arun Radhakrishnan
DOI: 10.1116/1.2049309
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摘要: The effect of wall temperature, from 50 to 200° C, on gas phase chemistry and substrate etching rates has been studied in inductively coupled CF 4 plasma under two distinctive initial wall conditions, namely “clean” and “seasoned.” During plasma etching, we found that the gas phase chemistry exhibits a weak dependence on the initial wall cleanliness when the wall is either cold (50° C) or hot (200° C). In the mid-temperature range, the wall cleanliness can strongly affect gas phase chemistry. The study of temperature dependence …
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