Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors

摘要: A generalized drift-diffusion model for the calculation of both quantum dot filling profile and dark current infrared photodetectors is proposed. The confined electrons inside dots produce a space-charge potential barrier between two contacts, which controls limits in device. results reasonably agree with published experimental work. It found that increasing either doping level or temperature an exponential increase current. turns out to be nonuniform, near contacts containing more than one middle device where occupation approximately equals number atoms per dot, means away from will nearly unoccupied if active region undoped.