Controlled synthesis and decoupling of monolayer graphene on SiC(0001)
作者： J. B. Hannon , R. M. Tromp
DOI: 10.1063/1.4873116
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摘要: We describe a process for the growth of single, electronically decoupled graphene layer on SiC(0001). The method involves annealing in disilane to (1) prepare flat, clean substrates, (2) grow single layer, and (3) decouple from substrate. This approach uses gas, at μTorr pressures, with modest substrate temperatures, thus affecting drastic simplification over other processes described literature.
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