Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

作者: Alan Seabaugh , Kristof Tahy , Soo Doo Chae , Aniruddha Konar , Rusen Yan

DOI: 10.1063/1.4732522

关键词:

摘要: … transistors (FETs) made with chemically synthesized multilayer crystal semiconductor WS 2 . The Schottky-barrier FETs demonstrate ambipolar … FETs using MoS 2 and WSe 2 have been …

参考文章(32)
Husnu Emrah Unalan, Yang Yang, Yan Zhang, Pritesh Hiralal, Daniel Kuo, Sharvari Dalal, Tim Butler, Seung Nam Cha, Jae Eun Jang, Konstantina Chremmou, Georgios Lentaris, Di Wei, Rital Rosentsveig, Kenichi Suzuki, Hidetoshi Matsumoto, Mie Minagawa, Yasuhiko Hayashi, Manish Chhowalla, Akihiko Tanioka, William I. Milne, Reshef Tenne, Gehan A. J. Amaratunga, ZnO Nanowire and $\hbox{WS}_{2}$ Nanotube Electronics IEEE Transactions on Electron Devices. ,vol. 55, pp. 2988- 3000 ,(2008) , 10.1109/TED.2008.2005166
Huili, Alan C. Seabaugh, Kristof Tahy, Wan Sik Hwang, Debdeep Jena, Xing, Xuesong Li, Chun-Yung Sung, Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene arXiv: Mesoscale and Nanoscale Physics. ,(2012) , 10.1063/1.4716983
R. Zeis, V. Podzorov, M. E. Gershenson, Ch. Kloc, E. Bucher, High-mobility field-effect transistors based on transition metal dichalcogenides Applied Physics Letters. ,vol. 84, pp. 3301- 3303 ,(2004) , 10.1063/1.1723695
C. H. Tung, H. P. Yu, K. L. Pey, W. K. Choi, D. A. Antoniadis, E. A. Fitzgerald, D. Z. Chi, Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate Applied Physics Letters. ,vol. 89, pp. 233520- ,(2006) , 10.1063/1.2402943
V. Derycke, R. Martel, J. Appenzeller, Ph. Avouris, Carbon Nanotube Inter- and Intramolecular Logic Gates Nano Letters. ,vol. 1, pp. 453- 456 ,(2001) , 10.1021/NL015606F
E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J.C. Bernède, J. Tedd, J. Pouzet, J. Salardenne, MS2 (M = W, Mo) photosensitive thin films for solar cells Solar Energy Materials and Solar Cells. ,vol. 46, pp. 115- 121 ,(1997) , 10.1016/S0927-0248(96)00096-7
Wan Sik Hwang, Kristof Tahy, Luke O. Nyakiti, Virginia D. Wheeler, Rachael. L. Myers-Ward, C. R. Eddy, D. Kurt Gaskill, Huili (Grace) Xing, Alan Seabaugh, Debdeep Jena, Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. ,vol. 30, pp. 03D104- ,(2012) , 10.1116/1.3693593
A. K. Geim, K. S. Novoselov, The rise of graphene Nature Materials. ,vol. 6, pp. 183- 191 ,(2007) , 10.1038/NMAT1849