Gated armchair nanotube and metallic field effect

摘要: We propose a useful metallic field effect element based on the electric control of armchair single-wall carbon nanotube. The electron conduction channels are enhanced by imposing transverse gate voltage. Multiple Dirac points have been revealed theoretically our density functional and tight binding calculations. Our transport results show that performance such unique transistors depends mainly diameter nanotube exploited. critical strength required decreases rapidly with tube diameter.