Goos-Hänchen shift in bilayer graphene

作者: M. Cheng

DOI: 10.1140/EPJB/E2012-20729-7

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摘要: The quantum Goos-Hanchen (GH) shift of an electron (massive Dirac fermion) at a potential step in bilayer graphene is investigated. We show that the GH depends on height, kinetic energy and incident angle. It found can be large (positive or negative) under suitable conditions.

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