Goos-Hanchen-like shifts for Dirac fermions in monolayer graphene barrier

摘要: The quantum Goos-Hanchen effect in graphene is found to be the lateral shift of Dirac fermions on total reflection at a single p-n interface. In this paper, we investigate shifts transmission through monolayer barrier. Compared smallness reflection, can enhanced by resonances when incidence angle less than critical for reflection. It also that shifts, as function barrier's width and angle, negative positive cases Klein tunneling classical motion. modulation realized changing electrostatic potential induced gap, which gives rise some applications graphene-based devices.