Giant negative and positive lateral shifts in graphene superlattices

摘要: Electronic analogy of Goos-Hanchen shift has been well established and investigated in various graphene-based nanostructures, including p-n interface, single double barriers. In this paper, we have studied the giant negative positive lateral shifts transmitted electron beam through graphene superlattices. It is found that shifts, depending on location new Dirac point, can be as near band edges zero-k (non-Bragg) gap. We also achieved enhanced opposite superlattice with defect layer, since such structure possesses mode inside The modulations by incidence angles, width potential height layer may lead to applications wave devices.