Multichannel silicon drift detectors for x-ray spectroscopy
作者： Peter Lechner , Werner Buttler , Carlo Fiorini , Robert Hartmann , Josef Kemmer
DOI: 10.1117/12.391596
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摘要: Silicon Drift Detectors (SDDs) with integrated readout transistor combine a large sensitive area small value of the output capacitance and are therefore well suited for high resolution, count rate X-ray spectroscopy. The low leakage current level obtained by elaborated process technology makes it possible to operate them at room temperature or moderate cooling. monolithic combination number SDDs Multichannel Detector solves limitation in size single device allows realization new physics experiments systems. description principle is followed introduction concept. Layout, performance, examples future applications given.
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