Multi-linear silicon drift detectors for X-ray and Compton imaging
作者： A. Castoldi , A. Galimberti , C. Guazzoni , P. Rehak , R. Hartmann
DOI: 10.1016/J.NIMA.2006.07.016
关键词: Silicon drift detector 、 Pixel 、 Electron 、 Physics 、 Detector 、 Ionization 、 Silicon 、 Full width at half maximum 、 Optics 、 Resolution (electron density)
摘要: Abstract Novel architectures of multi-anode silicon drift detectors with linear geometry (Multi-Linear Silicon Drift Detectors) have been developed to image X-rays and Compton electrons excellent time resolution achievable energy better than 200 eV FWHM at 5.9 keV. In this paper we describe the novel features Multi-Linear Detectors their possible operating modes highlighting impact on imaging spectroscopic capabilities. An application example for fast 2D elemental mapping by means K-edge subtraction is shown. The charge deposited in a Detector prototype irradiated 22Na source has measured showing possibility clearly resolve projection ionization track estimate specific loss per pixel. reconstruction electron tracks within detector layer can increase sensitivity telescopes nuclear medicine γ-ray astronomy.
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