Silicon Drift Detectors development for position sensing
作者： A. Castoldi , C. Guazzoni , R. Hartmann , L. Strüder
DOI: 10.1016/J.NIMA.2007.07.109
关键词:
摘要: Abstract Novel Silicon Drift Detectors (SDDs) with multi-linear architecture specifically intended for 2D position sensing and imaging applications are presented their achievable spatial, energy time resolution discussed. The capability of providing a fast timing the interaction nanosecond is new available feature that allows operating drift detector in continuous readout mode coincidence either an external trigger or self-timing. application SDDs to Compton electrons’ tracking within single silicon layer achieved experimental results will be
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