作者: B. H. Park , Y. Gim , Y. Fan , Q. X. Jia , P. Lu
DOI: 10.1063/1.1318233
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摘要: We have heteroepitaxially deposited Ba0.6Sr0.4TiO3 (BST) thin films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing the deposition temperature and adjusting film thickness, we successfully increased dielectric nonlinearity decreased loss of BST films. grown at 750 °C with a thickness 1.1 μm showed constant tunability greater than 65% tunability/loss 43 surface electric field 80 kV/cm room temperature. X-ray diffraction transmission electron microscopy analyses indicated that were closely related to crystallinity