Martin Seah
机构: National Physical Laboratory
每年引用次数
引用次数
引用: 39,392
H-指数: 76
I10-指数 : 267
出版物: 451
The depth dependence of the depth resolution in composition–depth profiling with Auger Electron Spectroscopy
M. P. Seah , C. P. Hunt
Surface and Interface Analysis 5 ( 1) 33 -37
97
1983
Characterization of a high depth-resolution tantalum pentoxide sputter profiling reference material
C. P. Hunt , M. P. Seah
Surface and Interface Analysis 5 ( 5) 199 -209
88
1983
XPS: Energy calibration of electron spectrometers. 2—Results of an interlaboratory comparison
M. T. Anthony , M. P. Seah
Surface and Interface Analysis 6 ( 3) 107 -115
79
1984
AES and XPS depth profiling certified reference material
C. P. Hunt , M. T. Anthony , M. P. Seah
Surface and Interface Analysis 6 ( 2) 92 -93
26
1984
Quantitative XPS: The calibration of spectrometer intensity—energy response functions. 1—The establishment of reference procedures and instrument behaviour
M. P. Seah , M. T. Anthony
Surface and Interface Analysis 6 ( 5) 230 -241
64
1984
Quantitative XPS: The calibration of spectrometer intensity—energy response functions. 2—Results of interlaboratory measurements for commercial instruments
M. P. Seah , M. E. Jones , M. T. Anthony
Surface and Interface Analysis 6 ( 5) 242 -254
52
1984
Attenuation lengths in organic materials
M. P. Seah , S. J. Spencer
Surface and Interface Analysis 43 ( 3) 744 -751
27
2011
Depth resolution and inhomogeneity of the sputtering dose with sample rotation and ion beam rastering
A. G. Shard , M. P. Seah
Surface and Interface Analysis 43 ( 11) 1430 -1435
6
2011
Topography effects and monatomic ion sputtering of undulating surfaces, particles and large nanoparticles: Sputtering yields, effective sputter rates and topography evolution
M. P. Seah
Surface and Interface Analysis 44 ( 2) 208 -218
19
2012
Linearity of the instrumental intensity scale in TOF‐SIMS—a VAMAS interlaboratory study
J. L. S. Lee , I. S. Gilmore , M. P. Seah
Surface and Interface Analysis 44 ( 1) 1 -14
14
2012
VAMAS interlaboratory study on organic depth profiling
A. G. Shard , S. Ray , M. P. Seah , L. Yang
Surface and Interface Analysis 43 ( 9) 1240 -1250
25
2011
Summary of ISO/TC 201 Standard: ISO 14701:2011 – Surface chemical analysis – X‐ray photoelectron spectroscopy—measurement of silicon oxide thickness
M. P. Seah
Surface and Interface Analysis 44 ( 7) 876 -878
7
2012
An accurate and simple universal curve for the energy‐dependent electron inelastic mean free path
M. P. Seah
Surface and Interface Analysis 44 ( 4) 497 -503
43
2012
Topography and field effects in secondary ion mass spectrometry Part II: insulating samples
J. L. S. Lee , I. S. Gilmore , M. P. Seah , A. P. Levick
Surface and Interface Analysis 44 ( 2) 238 -245
17
2012
Simple universal curve for the energy‐dependent electron attenuation length for all materials
M. P. Seah
Surface and Interface Analysis 44 ( 10) 1353 -1359
55
2012
M. Prutton (Compiler). Electronic properties of surfaces. Adam Hilger Ltd., Bristol, 1983, pp vi + 195, £9.95 (£7.95 IOP members) isbn 0‐85274‐773‐X
M. P. Seah
Surface and Interface Analysis 7 ( 4) 206 -206
1985
Surface chemical analysis—report on the vamas project
C. J. Powell , M. P. Seah
Surface and Interface Analysis 9 ( 2) 79 -83
14
1986
Data compilations: their use to improve measurement certainty in surface analysis by aes and xps
M. P. Seah
Surface and Interface Analysis 9 ( 2) 85 -98
133
1986
Atomic mixing and electron range effects in ultrahigh‐resolution profiles of the Ta2O5/Ta interface by argon sputtering with Auger electron spectroscopy
M. P. Seah , C. P. Hunt
Journal of Applied Physics 56 ( 7) 2106 -2113
28
1984
Correlations for predicting the surface wettability for organic light-emitting-diode patterns by x-ray photoelectron spectroscopy analysis
L. Yang , P. Svarnas , A. G. Shard , J. W. Bradley
Journal of Applied Physics 108 ( 11) 114901
2010