Fabrication of Nb/Al-Al/sub 2/O/sub 3//Nb junctions with extremely low leakage currents
作者： A.W. Lichtenberger , C.P. McClay , R.J. Mattauch , M.J. Feldman , S. Pan
DOI: 10.1109/20.92842
关键词: Torr 、 Superconductivity 、 Electrical resistivity and conductivity 、 Electric current 、 Niobium 、 Sputtering 、 Materials science 、 Condensed matter physics 、 Capacitance 、 Sputter deposition
摘要: Nb/Al-Al/sub 2/O/sub 3//Nb trilayer films were deposited using DC magnetron sputtering guns in a UHV (ultrahigh vacuum) system which is capable of 5*10/sup -10/ Torr. SIS (superconductor-insulator-superconductor) junctions as small 3.2*3.2 mu m/sup 2/ isolated from the by standard photolithography. The typically have V/sub m/=70-90 mV at 4.2 K, while 2.0 m/ large 1 V. This corresponds to subgap current 0.15% quasiparticle rise. leakage compared predictions BCS (Bardeen-Cooper-Schrieffer) theory. specific capacitance preliminarily measured be 45+or-5 fF/ 2/. >
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