RF-MEMS switch design optimization for long-term reliability
作者： Viviana Mulloni , Francesco Solazzi , Giuseppe Resta , Flavio Giacomozzi , Benno Margesin
DOI: 10.1007/S10470-013-0220-X
关键词: Electronic engineering 、 Contact resistance 、 Biasing 、 Stress (mechanics) 、 Ohmic contact 、 Reliability (semiconductor) 、 Engineering 、 Term (time) 、 Electrical engineering 、 Microelectromechanical systems 、 RF switch
摘要: This contribution presents an optimization strategy for the mechanical and geometrical characteristics of clamped-clamped RF-MEMS switches in order to enhance their reliability performances both terms switch properties control long-term stress actuation tests. Experimental measurements demonstrated that optimized version capacitive investigated shows improved resistance high bias voltage, while ohmic a lower more reproducible contact resistance.
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