Interface Engineering for High-κ Ge MOSFETs
作者： S. J. Lee , C. Zhu , D. L. Kwong
DOI: 10.1007/978-3-540-71491-0_5
关键词: Gate leakage current 、 Oxide 、 Current (fluid) 、 Germanium oxide 、 Interface (computing) 、 Materials science 、 Passivation 、 Optoelectronics 、 Interface engineering
摘要: Recent progress and current understanding of high-κ/Ge interface its impact on device performances are summarized. After reviewing the properties Ge oxide interface, several reported surface passivation techniques improved characteristics system using passivations discussed.
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