Synthesis of tungsten carbide thin films by reactive pulsed laser deposition
作者： N Chitica , Eniko Gyorgy , Adriana Lita , G Marin , I.N Mihailescu
DOI: 10.1016/S0040-6090(97)00001-1
关键词: Pulsed laser deposition 、 Tungsten carbide 、 Thin film 、 Metallurgy 、 Materials science 、 Tungsten 、 Optoelectronics 、 Carbide 、 Substrate (electronics) 、 Laser ablation 、 Deposition (phase transition)
摘要: Abstract We performed reactive pulsed laser deposition of tungsten carbide thin films by multipulse UV ablation W targets in low pressure (5×10−3–1 Pa) CH4. The were deposited onto Si wafers or glass substrates placed parallel with the target at a separation distance 70 mm. uniform and adherent to substrate even though was conducted collectors room temperature. reached rates region 0.15 A pulse−1.
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